Our Poly CMP slurry is designed for precision planarization of polysilicon layers in MOSFET and FinFET transistors, as well as integration schemes requiring bulk material removal and pattern control. It delivers high selectivity, low defectivity, and consistent performance across wafer sizes, with excellent topography control even under extended over-polishing conditions.

We offer two types of interlayer dielectric (ILD) CMP slurries: one based on silicon oxide nanoparticles and the other on cerium oxide nanoparticles. The silicon oxide-based slurry provides high planarization efficiency and low defectivity, ensuring smooth and uniform surfaces. The cerium oxide-based slurry, on the other hand, delivers a high removal rate, enhancing polishing efficiency and throughput.

Our STI CMP slurries, formulated with engineered cerium oxide nanoparticles, are designed for polishing shallow trench isolation (STI) structures in integrated circuit manufacturing. These slurries feature high silicon oxide-to-silicon nitride selectivity, tunable to specific process needs. They also minimize dishing, maintain high planarization efficiency, and reduce defects, particularly scratches, offering a cost-effective solution for high-quality STI polishing.

ANST’s high-performance tungsten CMP slurry is engineered for precision polishing of tungsten plug and interconnect structures in advanced semiconductor manufacturing. It combines optimized material removal rates (MRR) with high selectivity to dielectric layers, minimizing dishing/erosion and achieving nanoscale planarity. Compatible with leading CMP platforms, this slurry supports advanced logic, memory, and 3D IC production. Backed by ANST’s materials science expertise, it ensures repeatable, high-yield performance for critical tungsten CMP applications.

Our silicon CMP slurries are tailored for various stages of silicon wafer planarization, including:
Stock Polishing Slurries: High removal rates and excellent planarization for initial polishing.
Edge Polishing Slurries: High dilution ratio, low static etching rate, and low edge roughness for precise edge treatment.
Semi-Final Polishing Slurries: High flatness and low defect rates for intermediate polishing.
Final Polishing Slurries: Ultra-high purity for achieving the highest flatness and lowest defect rates.
These slurries are versatile, suitable for logic chips, storage chips, and other silicon-based applications.

ANST’s silicon carbide (SiC) slurry delivers superior planarity for 4H/6H-SiC wafers in power devices and RF applications. Available in electrochemical, bulk removal, and final polishing variants, our slurries achieve sub-nanometer roughness (Ra < 0.2 nm) and minimize subsurface damage. Engineered particle size distribution and tunable chemistry ensure flexibility and high yields.
Lithium Niobate & Lithium Tantalate
Our CMP solutions for lithium tantalate and lithium niobate wafers are designed for high-precision surface processing of piezoelectric crystal materials. Covering rough to fine polishing, these slurries offer high removal efficiency, ultra-low surface damage, and strong process flexibility.

Our CMP solutions for lithium tantalate and lithium niobate wafers are designed for high-precision surface processing of piezoelectric crystal materials. Covering rough to fine polishing, these slurries offer high removal efficiency, ultra-low surface damage, and strong process flexibility.

We provide ultraprecision CMP solutions for alumina and silica sol systems, suitable for polishing stainless steel, aluminum alloys, titanium alloys, ceramics, and more. Our products are divided into flat and 3D polishing, offering high removal rates, post-polishing roughness below 10 nm, high gloss, and easy cleaning.